Workshop Details
Competing Interactions and Colossal Responses in Transition Metal Oxides
06/26/2017 - 06/30/2017
Meeting Description:

One of the most compelling themes to emerge in materials science recently is the degree to which materials properties are dramatically enhanced in the presence of finely balanced competing interactions. Nowhere is this more evident than in transition metal oxides and related compounds, which display a remarkable variety of phenomena that may be ascribed to length scales in the presence of such competition is a key challenge in condensed matter physics, and forms the subject of the workshop on "Competing Interactions and Colossal Responses in Transition Metal Oxides".

This workshop is the ninth in a highly successful series of workshops that have been held in Telluride since 1998. Initially, these focused on the physics of colossal magnetoresistive manganites, since then the workshops have evolved to embrace the full breadth of correlated electron transition metal oxides (TMO) in bulk, thin film, and nanostructured forms. The workshop has always welcomed a combination of experiment and theory, and brings together chemists, physicists, and materials scientists working at the forefront of this exciting and diverse field.

The goals of the workshop are as follows:

1) To disseminate the most recent results in the physics of transition metal oxides and related compounds.

2) To provide a forum to discuss the underlying principles that govern the colossal response of materials subjected to strongly competing interactions.

3) To identify future directions for research in these materials.

4) To encourage new collaborations among experimental and/or theoretical programs among universities and national laboratories, and to strengthen ongoing collaborations.

Notes:

The workshop format will allow for intensive discussion after each presentation, as well as for general topical discussions. This format will consist of morning sessions with 30-minute presentations, followed by free afternoons and informal evening discussion periods. The experience from the previous workshops demonstrated that this approach was not only highly effective, but also extremely well-received by all participants. The environment in Telluride fosters free and open interactions.

ORGANIZERS
John Mitchell, Argonne National Laboratory
Jaime Fernandez-Baca, Oak Ridge National Laboratory


If you are interested in attending a meeting, but have not received an invitation, please contact the workshop organizer about availability before registering. Most TSRC meetings are very small, typically only about 25 people.

Meeting Venue:

Telluride Intermediate School
725 West Colorado Ave Telluride CO 81435

Competing Interactions and Colossal Responses in Transition Metal Oxides Registered Meeting Participants:
Participant Organization
Batista, Cristian University of Tennessee
Bhattacharya, Anand Argonne National Laboratory
Billinge, Simon Brookhaven Lab
Calder, Stuart Oak Ridge National Laboratory
Cao, Gang University of Colorado Boulder
Chapon, Laurent Diamond Light Source Limited
Cheong, Sang-Wook Rutgers University
Christianson, Andrew Oak Ridge National Laboratory
Dean, Mark Philip Martin Brookhaven National Laboratory
Fernandez-Baca, Jaime Oak Ridge National Laboratory
Fitzsimmons, Michael Oak Ridge National Lab, Quantum Condensed Matter D
Jackeli, George University of Stuttgart
Kaindl, Robert A. Lawrence Berkeley National Lab
Khomskii, Daniil Cologne University, Germany
Kim, Yong-Baek University of Toronto
Kimura, Tsuyoshi Osaka University
Lumsden, Mark Oak Ridge National Laboratory
May, Steve Drexel University
Medarde Barragan, Maria Luisa Paul Scherrer Institut
Mourigal, Martin Georgia Tech
Norman, Michael Argonne National Lab
Rondinelli, James Northwestern University
Savary, Lucile MIT
Stemmer, Susanne University of California, Santa Barbara
Takagi, Hidenori Max Planck Institute
Valenti, Roser Goethe University Frankfurt
Wen, Haidan Argonne National Lab
Woodward, Patrick Ohio State University
Zhao, Liuyan University of Michigan

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